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Article Dans Une Revue Biomaterials Année : 2015

3D-nanostructured boron-doped diamond for microelectrode array neural interfacing

Résumé

The electrode material is a key element in the design of long-term neural implants and neuroprostheses. To date, the ideal electrode material offering high longevity, biocompatibility, low-noise recording and high stimulation capabilities remains to be found. We show that 3D-nanostructured boron doped diamond (BDD), an innovative material consisting in a chemically stable material with a high aspect ratio structure obtained by encapsulation of a carbon nanotube template within two BDD nanolayers, allows neural cell attachment, survival and neurite extension. Further, we developed arrays of 20-μm-diameter 3D-nanostructured BDD microelectrodes for neural interfacing. These microelectrodes exhibited low impedances and low intrinsic recording noise levels. In particular, they allowed the detection of low amplitude (10–20 μV) local-field potentials, single units and multiunit bursts neural activity in both acute whole embryonic hindbrain-spinal cord preparations and long-term hippocampal cell cultures. Also, cyclic voltammetry measurements showed a wide potential window of about 3 V and a charge storage capacity of 10 mC.cm−2, showing high potentiality of this material for neural stimulation. These results demonstrate the attractiveness of 3D-nanostructured BDD as a novel material for neural interfacing, with potential applications for the design of biocompatible neural implants for the exploration and rehabilitation of the nervous system.
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Dates et versions

hal-01132931 , version 1 (18-03-2015)

Identifiants

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Gaëlle Piret, Clément Hébert, Jean-Paul Mazellier, Lionel Rousseau, Emmanuel Scorsone, et al.. 3D-nanostructured boron-doped diamond for microelectrode array neural interfacing. Biomaterials, 2015, 53, pp.173-183. ⟨10.1016/j.biomaterials.2015.02.021⟩. ⟨hal-01132931⟩
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