Light-emitting diodes by band-structure engineering in van der Waals heterostructures, Nature Materials, vol.9, issue.3, pp.301-307, 2015. ,
DOI : 10.1038/nnano.2014.150
URL : http://arxiv.org/abs/1412.7621
with Vertically Aligned Layers, Nano Letters, vol.15, issue.2, pp.1031-1036, 2015. ,
DOI : 10.1021/nl503897h
Vertical and in-plane heterostructures from WS2/MoS2 monolayers, Nature Materials, vol.132, issue.12, pp.1135-1177, 2014. ,
DOI : 10.1021/ja1058026
URL : https://scholarship.rice.edu/bitstream/1911/78911/1/43052_3_art_file_322289_nml501.pdf
Interlayer Exciton Optoelectronics in a 2D Heterostructure p???n Junction, Nano Letters, vol.17, issue.2, pp.638-681, 2017. ,
DOI : 10.1021/acs.nanolett.6b03398
Correlated fluorescence blinking in two-dimensional semiconductor heterostructures, Nature, vol.103, issue.7635, pp.62-69, 2017. ,
DOI : 10.1103/PhysRevLett.103.207402
Heterostructures based on two-dimensional layered materials and their potential applications, Materials Today, vol.19, issue.6, pp.322-357, 2016. ,
DOI : 10.1016/j.mattod.2015.11.003
URL : http://doi.org/10.1016/j.mattod.2015.11.003
Layer Engineering of 2D Semiconductor Junctions, Advanced Materials, vol.54, issue.25, pp.5126-5158, 2016. ,
DOI : 10.1103/PhysRevB.54.11169
A high performance graphene/few-layer InSe photo-detector, Nanoscale, vol.10, issue.14, pp.5981-5987, 2015. ,
DOI : 10.1002/smll.201303670
URL : https://hal.archives-ouvertes.fr/hal-01136120
Atomically thin p???n junctions with van der Waals heterointerfaces, Nature Nanotechnology, vol.342, issue.9, pp.676-81, 2014. ,
DOI : 10.1126/science.1244358
URL : http://arxiv.org/abs/1403.3062
Heterostructure Transistors, Advanced Functional Materials, vol.6, issue.44, pp.7025-7056, 2014. ,
DOI : 10.1021/nn2024557
Plasmon resonance enhanced multicolour photodetection by graphene, Nature Communications, vol.2, p.579, 2011. ,
DOI : 10.1038/ncomms1464
URL : http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4235953
Microcavity-Integrated Graphene Photodetector, Nano Letters, vol.12, issue.6, pp.2773-2780, 2012. ,
DOI : 10.1021/nl204512x
URL : http://doi.org/10.1021/nl204512x
Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates, ACS Nano, vol.6, issue.8, pp.7381-7389, 2012. ,
DOI : 10.1021/nn3025173
URL : http://arxiv.org/abs/1308.3835
Engineering Light Outcoupling in 2D Materials, Nano Letters, vol.15, issue.2, pp.1356-61, 2015. ,
DOI : 10.1021/nl504632u
The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2, Nano Research, vol.97, issue.4, pp.561-71, 2014. ,
DOI : 10.1016/0038-1098(95)00758-X
Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material, Chem. Soc. Rev., vol.87, issue.9, pp.2757-85, 2015. ,
DOI : 10.1103/PhysRevB.87.205404
van der Waals Stacking, ACS Nano, vol.8, issue.9, pp.9649-56, 2014. ,
DOI : 10.1021/nn504229z
Bilayer Heterostructures Revealed by Optical Spectroscopy, ACS Nano, vol.10, issue.7, pp.6612-6634, 2016. ,
DOI : 10.1021/acsnano.6b01486
Anodic bonded 2D semiconductors: from synthesis to device fabrication, Nanotechnology, vol.24, issue.41, p.415708, 2013. ,
DOI : 10.1088/0957-4484/24/41/415708
URL : https://hal.archives-ouvertes.fr/hal-01053499
Boron nitride substrates for high-quality graphene electronics, Nature Nanotechnology, vol.104, issue.10, pp.722-728, 2010. ,
DOI : 10.1038/nnano.2010.172
URL : http://arxiv.org/abs/1005.4917
One-Dimensional Electrical Contact to a Two-Dimensional Material, Science, vol.98, issue.5866, pp.614-621, 2013. ,
DOI : 10.1063/1.2071455
Interlayer electron???phonon coupling in WSe2/hBN heterostructures, Nature Physics, vol.342, issue.2, pp.127-158, 2017. ,
DOI : 10.1126/science.1244358
Interference enhancement of Raman signal of graphene, Applied Physics Letters, vol.92, issue.4, p.43121, 2008. ,
DOI : 10.1103/PhysRevLett.44.273
> 4), ACS Nano, vol.5, issue.1, pp.269-74, 2011. ,
DOI : 10.1021/nn102658a
C: Solid State Phys, J. Phys, vol.12, pp.881-90, 1979. ,
Optical constants and interband transitions in the layer compound InSe, Solid State Communications, vol.21, issue.3, pp.323-328, 1977. ,
DOI : 10.1016/0038-1098(77)90197-1
Interspecimen Comparison of the Refractive Index of Fused Silica*,???, Journal of the Optical Society of America, vol.55, issue.10, pp.1205-1213, 1965. ,
DOI : 10.1364/JOSA.55.001205
Optical properties of intrinsic silicon at 300 K, Progress in Photovoltaics: Research and Applications, vol.15, issue.3, pp.189-92, 1995. ,
DOI : 10.1016/B978-0-08-054721-3.50029-0
Self-consistent optical parameters of intrinsic silicon at 300K including temperature coefficients, Solar Energy Materials and Solar Cells, vol.92, issue.11, pp.1305-1315, 2008. ,
DOI : 10.1016/j.solmat.2008.06.009