Inducing conductivity in polycrystalline ZnO 1- x thin films through space charge doping

Abstract : We induce ultra-high carrier charge density in polycrystalline zinc oxide thin films on glass with a thickness of few tens of nm, achieving carrier concentrations as high as 2.2×1014 cm−2, well beyond the Ioffe-Regel limit for an insulator-metal transition in two dimensions. The sheet resistance is consequently lowered by up to 5 orders of magnitude to about 2 k Ω/◻ without alteration of transparency thanks to our space charge doping technique. Electrostatic doping of such a large band-gap semiconductor is quite challenging, and a high surface potential is required in order to induce conductivity at the interface. Through magneto-transport measurements performed at low temperature on the doped films, we show that both weak localization and weak anti-localization of charge carriers can be observed and that these quantum interference phenomena can be modulated by the carrier concentration and temperature.
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Journal of Applied Physics, American Institute of Physics, 2017, 122 (9), pp.095301 〈10.1063/1.5001127〉
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Andrea Paradisi, Johan Biscaras, Abhay Shukla. Inducing conductivity in polycrystalline ZnO 1- x thin films through space charge doping. Journal of Applied Physics, American Institute of Physics, 2017, 122 (9), pp.095301 〈10.1063/1.5001127〉. 〈hal-01611605〉

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