S. J. Avrutin, H. Cho, and . Morkoc, A comprehensive review of ZnO materials and devices, J. Appl. Phys, vol.98, issue.4, p.41301, 2005.

M. C. Fortunato, P. M. Barquinha, A. C. Pimentel, A. M. Gonçalves, A. J. Marques et al., Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature, Advanced Materials, vol.25, issue.5, pp.590-594, 2005.
DOI : 10.1143/JJAP.40.530

F. Garcia, R. S. Mclean, M. H. Reilly, and G. Nunes, Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering, Appl. Phys. Lett, vol.82, issue.7, p.1117, 2003.

J. M. Wainstein, J. L. Albella, and . Endrino, Exciton and core-level electron confinement effects in transparent ZnO thin films prepared by dc magnetron reactive sputtering, Sci. Rep. J. Vac. Sci. Technol. A, vol.3, issue.193, pp.1714-963, 2001.

J. Andrearczyk, G. Jaroszy-nski, T. Grabecki, T. Dietl, M. Fukumura et al., thin films, Physical Review B, vol.242, issue.245, p.121309, 2005.
DOI : 10.1103/PhysRevB.67.115211

A. Buyanova, A. Murayama, T. Furuta, Y. Oka, D. P. Norton et al., Spin Dynamics in ZnO-Based Materials, Journal of Superconductivity and Novel Magnetism, vol.47, issue.1, pp.161-165, 2010.
DOI : 10.1007/s10948-009-0551-0

. Shapira, Anomalous effect of UHV???component???generated atomic hydrogen on the surface properties of ZnO, Journal of Vacuum Science and Technology, vol.13, issue.2, p.615, 1976.
DOI : 10.1116/1.569044

A. Yaron, Y. Many, and . Goldstein, Quantized electron accumulation layers on ZnO surfaces produced by low???energy hydrogen???ion implantation, Journal of Applied Physics, vol.41, issue.9, p.3508, 1985.
DOI : 10.1080/00337577908237933

A. Goldstein, D. Many, Y. Eger, G. Grinshpan, M. Yaron et al., Extreme accumulation layers on ZnO surfaces due to Heþ ions
DOI : 10.1016/0375-9601(77)90583-7

V. Goldenblum, T. Bogatu, Y. Stoica, A. Goldstein, and . Many, Weak localization effects in ZnO surface wells, Physical Review B, vol.259, issue.2, pp.5832-5838, 1999.
DOI : 10.1016/0040-6090(94)06408-3

H. Yuan, A. Shimotani, A. Tsukazaki, M. Ohtomo, Y. Kawasaki et al., High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids, Advanced Functional Materials, vol.105, issue.7, pp.1046-1053, 2009.
DOI : 10.1007/978-1-4615-6185-9

H. Yuan, J. Shimotani, S. Ye, H. Yoon, A. Aliah et al., Electrostatic and electrochemical nature of lquid-gated electric-double-layer transistors based on oxide semiconductors, J. Am. Chem. Soc, issue.51, pp.132-18402, 2010.

Y. Oh, M. C. Jeong, T. H. Moon, W. Lee, J. M. Myoung et al., Transparent conductive Al-doped ZnO films for liquid crystal displays, Journal of Applied Physics, vol.99, issue.12, pp.99-124505, 2006.
DOI : 10.1063/1.1988982

J. Paradisi, A. Biscaras, and . Shukla, Space charge induced electrostatic doping of two-dimensional materials: Graphene as a case study, Applied Physics Letters, vol.20, issue.14, p.143103, 2015.
DOI : 10.1103/PhysRevLett.97.187401
URL : https://hal.archives-ouvertes.fr/hal-01220521

Z. Biscaras, A. Chen, A. Paradisi, and . Shukla, Onset of two-dimensional superconductivity in space charge doped few-layer molybdenum disulfide, Nature Communications, vol.87, p.8826, 2015.
DOI : 10.1103/PhysRevB.87.195316
URL : https://hal.archives-ouvertes.fr/hal-01502198

A. W. Mehrer, E. Imre, and . Tanguep-nijokep, Diffusion and ionic conduction in oxide glasses, Journal of Physics: Conference Series, vol.106, p.12001, 2008.
DOI : 10.1088/1742-6596/106/1/012001
URL : http://iopscience.iop.org/article/10.1088/1742-6596/106/1/012001/pdf

M. C. Fortunato, P. M. Barquinha, A. C. Pimentel, A. M. Goncalves, A. J. Marques et al., Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature, Applied Physics Letters, vol.85, issue.13, pp.85-2541, 2004.
DOI : 10.1126/science.1085276

A. Ziegler, H. Heinrich, G. Oppermann, and . St?-over, Electrical properties and non-stoichiometry in ZnO single crystals, Physica Status Solidi (a), vol.79, issue.2, pp.635-648, 1981.
DOI : 10.1002/pssa.2210660228

M. Lu, W. S. Hwang, W. Y. Liu, and J. S. Yang, Effect of RF power on optical and electrical properties of ZnO thin film by magnetron sputtering, Materials Chemistry and Physics, vol.72, issue.2, pp.269-272, 2001.
DOI : 10.1016/S0254-0584(01)00450-3

G. Rusu, M. Grtan, and M. Rusu, Preparation and characterization of ZnO thin films prepared by thermal oxidation of evaporated Zn thin films, Superlattices and Microstructures, vol.42, issue.1-6, pp.1-6, 2007.
DOI : 10.1016/j.spmi.2007.04.021

L. Patterson, The Scherrer Formula for X-Ray Particle Size Determination, Physical Review, vol.74, issue.10, pp.978-982, 1939.
DOI : 10.1098/rspa.1938.0079

D. Sarma and E. H. Hwang, Two-dimensional metal-insulator transition as a strong localization induced crossover phenomenon, Physical Review B, vol.40, issue.23, p.235423, 2014.
DOI : 10.1103/PhysRevB.64.214204

. Paradisi and S. Biscaras, thin films through space charge doping, Journal of Applied Physics, vol.60, issue.9, pp.95301-95330, 2017.
DOI : 10.1103/PhysRevB.79.115204
URL : https://hal.archives-ouvertes.fr/hal-01611605

A. T. Vai, V. L. Kuznetsov, H. Jain, D. Slocombe, N. Rashidi et al., -type Doped ZnO Thin Films, Zeitschrift f??r anorganische und allgemeine Chemie, vol.16, issue.6, pp.1054-1062, 2014.
DOI : 10.1088/0022-3735/16/12/023
URL : https://hal.archives-ouvertes.fr/hal-01537193

D. H. Zhang and H. L. Ma, Scattering mechanisms of charge carriers in transparent conducting oxide films, Applied Physics A Materials Science and Processing, vol.77, issue.5, pp.487-492, 1996.
DOI : 10.1149/1.2114132

R. L. Petritz, Theory of Photoconductivity in Semiconductor Films, Physical Review, vol.27, issue.6, pp.1508-1516, 1956.
DOI : 10.1063/1.1715376

S. A. Agnihotry, K. K. Saini, T. K. Saxena, K. C. Nagpal, and S. Chandra, :Sn at moderate substrate temperatures, Journal of Physics D: Applied Physics, vol.18, issue.10, pp.2087-2096, 1985.
DOI : 10.1088/0022-3727/18/10/019

J. Robertson and S. J. Clark, Limits to doping in oxides, Physical Review B, vol.83, issue.7, p.75205, 2011.
DOI : 10.1063/1.2957056
URL : http://dro.dur.ac.uk/10273/1/10273.pdf?DDD25+

A. Alkauskas and A. Pasquarello, Band-edge problem in the theoretical determination of defect energy levels: The O vacancy in ZnO as a benchmark case, Physical Review B, vol.84, issue.12, p.125206, 2011.
DOI : 10.1103/PhysRevB.75.235102

L. Liu, Z. Mei, A. Tang, A. Azarov, A. Kuznetsov et al., -type conductivity in ZnO, Physical Review B, vol.12, issue.23, p.235305, 2016.
DOI : 10.1023/A:1012641212173
URL : https://hal.archives-ouvertes.fr/hal-01480186

L. S. Vlasenko and G. D. Watkins, Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO, Physical Review B, vol.308, issue.310, p.125210, 2005.
DOI : 10.1016/S0921-4526(01)00830-4

G. Giuliani, A general law for electromagnetic induction, EPL (Europhysics Letters), vol.81, issue.6, p.60002, 2008.
DOI : 10.1209/0295-5075/81/60002
URL : http://arxiv.org/pdf/1502.00502

D. F. Wang, J. M. Kim, M. S. Seo, V. T. Thuy, Y. J. Yoo et al., Magnetoresistance in ZnO induced by spin-splitting and weak localization, Materials Chemistry and Physics, vol.134, issue.1, pp.74-79, 2012.
DOI : 10.1016/j.matchemphys.2012.02.031

D. F. Wang, Y. Ying, V. T. Thuy, J. M. Kim, M. S. Seo et al., Temperature-dependent magnetoresistance of ZnO thin film, Thin Solid Films, vol.520, issue.1, pp.529-532, 2011.
DOI : 10.1016/j.tsf.2011.07.053

E. Iordanskii, S. V. Lyanda-geller, and Y. B. Pikus, Weak localization in quantum wells with spin-orbit interaction, JETP Lett, vol.60, issue.206, 1994.

M. Triscone, Tunable Rashba spin-orbit interaction at oxide interfaces, Phys. Rev. Lett, vol.104, issue.12, p.126803, 2010.

A. I. Hikami, Y. Larkin, and . Nagaoka, Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System, Progress of Theoretical Physics, vol.63, issue.2, pp.707-710, 1980.
DOI : 10.1143/PTP.63.707

V. Germanenko, Spin effects and quantum corrections to the conductivity of two-dimensional systems, Low Temperature Physics, vol.2, issue.1, p.24, 2009.
DOI : 10.1103/PhysRevB.75.193311

J. Elliott, Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some Semiconductors, Physical Review, vol.78, issue.2, pp.266-279, 1954.
DOI : 10.1103/PhysRev.78.173

. Yafet, g factors and spin-lattice relaxation of conduction electrons Solid State Phys, pp.1-98, 1963.
DOI : 10.1016/s0081-1947(08)60259-3

I. Zutic´, J. Zutic´, S. Fabian, and . Sarma, Spintronics: Fundamentals and applications, Reviews of Modern Physics, vol.81, issue.2, pp.323-410, 2004.
DOI : 10.1063/1.1496504

J. Harmon, W. O. Putikka, and R. Joynt, Theory of electron spin relaxation in ZnO, Physical Review B, vol.2, issue.11, p.115204, 2009.
DOI : 10.1016/S0921-5107(00)00604-8

. Paradisi and S. Biscaras, thin films through space charge doping, Journal of Applied Physics, vol.60, issue.9, p.95301, 2017.
DOI : 10.1103/PhysRevB.79.115204
URL : https://hal.archives-ouvertes.fr/hal-01611605